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| BFR182T/BFR182TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure D High power gain 1 1 13 581 94 9280 13 652 13 570 2 3 2 3 BFR182T Marking: RG Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR182TW Marking: WRG Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 15 10 2 35 5 200 150 -65 to +150 Unit V V V mA mA mW C C Tamb 60 C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W Document Number 85025 Rev. 2, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 1 (4) BFR182T/BFR182TW Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 15 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 30 mA, IB = 3 mA VCE = 6 V, IC = 5 mA VCE = 8 V, IC = 20 mA Symbol Min ICES ICBO IEBO V(BR)CEO 10 VCEsat hFE 50 hFE Typ Max Unit 100 mA 100 nA 1 mA V 0.4 V 0.1 90 100 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency q y Test Conditions VCE = 6 V, IC = 5 mA, f = 500 MHz VCE = 8 V, IC = 20 mA, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure VCE = 6 V, IC = 5 mA, ZS = ZSopt, f = 900 MHz VCE = 6 V, IC = 5 mA, ZS = ZSopt, f = 1.75 GHz Power gain VCE = 8 V, IC = 20 mA, ZS = 50 W, ZL = ZLopt, f = 900 MHz VCE = 8 V, IC = 20 mA, ZS = 50 W, ZL = ZLopt, f = 1.75 GHz Transducer gain VCE = 8 V, IC = 20 mA, f = 900 MHz, Z0 = 50 W Symbol fT fT Ccb Cce Ceb F F Gpe Gpe S21e2 Min Typ 5.5 7.5 0.3 0.2 0.65 1.5 2.0 15 11 14 Max Unit GHz GHz pF pF pF dB dB dB dB dB www.vishay.de * FaxBack +1-408-970-5600 2 (4) Document Number 85025 Rev. 2, 20-Jan-99 BFR182T/BFR182TW Vishay Telefunken Dimensions of BFR182T in mm 95 11346 Dimensions of BFR182TW in mm 96 12236 Document Number 85025 Rev. 2, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 3 (4) BFR182T/BFR182TW Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 4 (4) Document Number 85025 Rev. 2, 20-Jan-99 |
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